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Alan Lin
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According to media sources, the trading price of DRAM memory, which has been on the rise since the beginning of this year, fell by nearly 10% in October alone.
This can also be seen evidenced by data from market research firm TrendForce: DRAM general-purpose products for PCs (DDR4 8GB) traded at $3.71 in October, down $0.39 sequentially and 9.51% from the previous quarter, a drop that reached its highest rate of decline since July 2019, when prices plunged once to 11.18%. DRAM has been on an upward price trend since January of this year, and this is the first price drop of the year.
According to its latest research data, the DRAM supply bit growth rate in 2022 is about 18.6%, however, as the current buyer inventory level is already high and the demand bit growth rate in 2022 is only 17.1%, the DRAM industry will shift from oversupply to oversupply next year. Although DRAM prices will decline due to oversupply, the overall output value will not drop significantly in an oligopolistic market situation.
In terms of DRAM capital expenditures, the overall capital expenditure to revenue ratio has gradually increased in recent years, mainly due to two major reasons.
(1) As DRAM process shrinkage has gradually faced its physical limit, after the 20nm process, except for Micron's 1α nm, which still creates nearly 30% single wafer growth, the growth of other processes from 1Xnm to 1Ynm, or 1Ynm to 1Znm, has converged to less than 15%. In 2022, Samsung and SK Hynix will formally introduce their state-of-the-art processes into the key EUV machine, which has a long production lead time and high cost, causing the three major OEMs to allocate large capital expenditures in advance to meet the EUV front-end orders.
(2) Since DRAM has formed an oligopolistic market, even if the average price occasionally falls, the average sales price is difficult to fall below the total production cost because of the production order of suppliers, so DRAM original manufacturers are able to gradually accumulate profits from the production of this product. Due to the difficulty of process transfer, in addition to the three major original manufacturers, Nanya Tech and Winbond, which have smaller market shares, have actual expansion plans, which is another major reason for the continuous increase in the CAPEX to sales ratio in the DRAM market.
In 2021, the chip capacity shortage will sweep across the world, the semiconductor industry will witness a structural transformation, and the storage industry will also face huge challenges. In the face of development opportunities and uncertainties, foreign storage majors such as Samsung and SK Hynix have been making moves.
It is reported that, due to the downward trend of DRAM prices, Samsung and SK Hynix are also making adjustments to their inventories, although they are bullish on the storage market. It is reported that Samsung and SK Hynix will launch a shipment control program to control their DRAM supply. This move will be officially launched in the fourth quarter of this year, while both companies are planning to increase foundry capacity.
For future market trends, using the oversupply ratio for each quarter next year as a basis for prediction, TrendForce expects the average DRAM unit sales price to decrease by 15% annually, with the price decline more pronounced in the first half of the year. In addition, the report expects that from the second half of next year, benefiting from the increased penetration of DDR5 and the peak season demand effect, the average DRAM price decline will converge and the possibility of a flat or price increase cannot be ruled out.
Samsung Electronics plans to further improve its semiconductor cost competitiveness through 14nm DRAM and 7th generation 176-layer NAND Flash production lines in response to memory uncertainty.
About NAND Flash: https://www.utmel.com/blog/categories/memory%20chip/what-is-nand-flash
Samsung Electronics recently put into mass production the industry's smallest linewidth 14nm DRAM with five layers applying the EUV (Extreme Outer Line) process, achieving an industry-leading wafer density. The number of DRAMs on a wafer has increased by approximately 20% over previous generations, significantly reducing wafer costs.
SK Hynix also said, "Uncertainty in the DRAM market is high in the short term." and has promoted profitability-focused management rather than competing for share through economies of scale.
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Alan Lin
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In order to enhance everyone's understanding of Bluetooth, this article will introduce Bluetooth based on three points: 1. Overview of Bluetooth testing, 2. Bluetooth headset life, 3. How to extend the life of Bluetooth headset.
1. Overview of Bluetooth test
1) Introduction to the basic concepts of Bluetooth wireless technology
Bluetooth is a very common short-range wireless transmission technology at present. Since it can be used to replace wired cables, its cost is relatively low and it is easy to operate. These requirements pose challenges to Bluetooth technology, and Bluetooth technology meets these challenges through a variety of means. The Bluetooth radio unit adopts the frequency modulation spread spectrum method (FHSS) design, the design focuses on low power consumption, low cost and anti-interference performance in the industrial, scientific, and medical radio frequency bands.
Bluetooth devices work in the ISM (industrial, scientific, medical) frequency band, usually operating on 79 channels between 2.402GHz to 2.4835GHz, and each channel occupies 1M bandwidth. And can perform frequency hopping on 79 channels. It uses a digital frequency modulation technique called Gaussian Frequency Shift Keying (GFSK) to communicate with each other.
2) Bluetooth test mode
Bluetooth devices can work in different modes.
Normal mode: It is a standard Bluetooth communication process. For example: the measuring instrument acts as the master device, and the Bluetooth device acts as the slave device.
Transmitter test mode: In this mode, the transmitter is working in a special state, you can use the measuring instrument to fix the working frequency of the Bluetooth device, and then measure various parameters of the Bluetooth transmitter.
Loop test mode: The Bluetooth device is required to decode the packet sent by the tester and return the pre-installed data using the same packet type.
3) Establishment of the test
(1) Establishment of test conditions
Frequency hopping technology in Bluetooth increases the difficulty of signal analysis. The power capacity test of the Bluetooth device requires a frequency hopping mode of operation, while the parameter test does not require frequency hopping. Therefore, it is necessary to turn off frequency hopping in most tests.
(2) Test setup
The test plan is built as follows:
Test setup 1 : It can meet transmitter spurious test, receiver spurious test and frequency range test, etc., because only Bluetooth simulator is not enough to test these test items, it needs to use related measuring equipment, such as spectrum analyzer. In the figure, first use the Bluetooth device to connect to the Bluetooth simulator through the power splitter, use the Bluetooth simulator to control the Bluetooth device to enter the transmitter test mode, and fix the working frequency of the Bluetooth device (that is, turn off the frequency hopping), and then connect the spectrum analyzer to the power The other port of the dispenser is used to measure Bluetooth devices.
Test setup 2 : It can meet transmitter output power, power control test and modulation spectrum test, etc., because many Bluetooth simulators already have these kinds of simple tests, for example: Bluetooth comprehensive tester. In the figure, the Bluetooth device is connected to the Bluetooth simulator through the power divider, the Bluetooth device is used to control the Bluetooth device to enter the transmitter test mode, and the internal test setting function of the Bluetooth simulator is used to control the transmission type (frequency hopping is turned on or off, different Data packets, etc.) to ensure that the correct test conditions are provided, and then the Bluetooth device is measured.
2. The life of the Bluetooth headset
The normal life of a Bluetooth headset is generally closely related to its battery life. Generally, the battery of a Bluetooth headset can continuously talk for 8-10 hours, listen to music for 6-8 hours, and can stand by for 15-30 days. The battery life of a Bluetooth headset is mainly related to the quality of the battery. The battery life of a good quality wireless Bluetooth headset is generally 2-3 years.
3. How to extend the life of Bluetooth headsets
1). The batteries of Bluetooth headsets are built-in lithium batteries and cannot be replaced. Always use Bluetooth headsets to protect the battery, don't overuse it, and charge the Bluetooth headset in time.
2). Do not expose the Bluetooth headset to liquid or humid places.
3). Never use abrasive solvents to clean the Bluetooth headset.
4). Do not place the Bluetooth headset in a place where the temperature is extremely high or extremely low. The best storage environment is -10 degrees to +60 degrees, otherwise it will affect the service life of the Bluetooth headset.
5). Keep the Bluetooth headset away from places with large temperature changes and dust. Do not expose the Bluetooth headset to open flames to avoid the risk of explosion.
6). Do not touch the Bluetooth headset to sharp objects, it will cause scratches or damage.
7). Do not insert any objects into the Bluetooth headset, it will damage the internal components.
8). Do not try to disassemble the Bluetooth headset.
Related Article: https://www.utmel.com/blog/categories/wireless/bluetooth-explained-characteristics-and-applications
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Alan Lin
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Crystal oscillators, ceramic resonant tank circuit, RC oscillator and silicon oscillator are the four clock sources suitable for microcontrollers (µC). Optimizing the clock source design for a specific application depends on the following factors: cost, accuracy, and environmental parameters. This application note discusses various factors related to microcontroller clock selection and compares different types of oscillators.
Overview
Microcontroller clock sources can be divided into two categories: clock sources based on mechanical resonant devices, such as crystal oscillators and ceramic resonant tank circuits; clock sources based on phase shift circuits, such as RC (resistor, capacitor) oscillators. Silicon oscillators are usually fully integrated RC oscillators. In order to improve stability, they include clock sources, matching resistors and capacitors, and temperature compensation. Figure 1 shows two examples of clock sources. Figure 1a shows the Pierce oscillator configuration for mechanical resonant devices such as crystals and ceramic resonant tank circuits. Figure 1b shows a simple RC feedback oscillator.
The main difference between mechanical resonator and RC oscillator
Oscillators based on crystal and ceramic resonant tank circuits (mechanical) usually provide very high initial accuracy and low temperature coefficient. Relatively speaking, the RC oscillator can start quickly and cost is relatively low, but it usually has poor accuracy over the entire temperature and operating power supply voltage range, and will vary from 5% to 50% of the nominal output frequency. The circuit shown in Figure 1 can generate a reliable clock signal, but its performance is affected by environmental conditions, circuit component selection, and oscillator circuit layout. The component selection and circuit board layout of the oscillator circuit must be taken seriously. In use, the ceramic resonant tank circuit and the corresponding load capacitance must be optimized according to the specific logic series. A crystal oscillator with a high Q value is not sensitive to the choice of amplifier, but it is prone to frequency drift (or even damage) when over-driving. Environmental factors that affect the operation of the oscillator include: electromagnetic interference (EMI), mechanical vibration and shock, humidity and temperature. These factors will increase the output frequency change, increase jitter, and in some cases, also cause the oscillator to stop oscillating.
Oscillator module
Most of the above problems can be avoided by using the oscillator module. These modules have their own oscillator, provide a low-impedance square wave output, and can guarantee operation under certain conditions. The two most commonly used types are crystal oscillator modules and integrated silicon oscillators. The crystal oscillator module provides the same accuracy as a discrete crystal oscillator. The accuracy of the silicon oscillator is higher than that of the discrete RC oscillator, and in most cases it can provide the same accuracy as the ceramic resonant tank circuit.
Power consumption
You also need to consider power consumption when choosing an oscillator. The power consumption of the discrete oscillator is mainly determined by the power supply current of the feedback amplifier and the capacitance value inside the circuit. The power consumption of a CMOS amplifier is proportional to the operating frequency and can be expressed as a power dissipation capacitance value. For example, the power dissipation capacitance value of the HC04 inverter gate circuit is 90pF. When working under 4MHz, 5V power supply, it is equivalent to 1.8mA power supply current. Coupled with the 20pF crystal load capacitance, the entire power supply current is 2.2mA.
Compared with crystal oscillator circuits, ceramic resonant tank circuits generally have a larger load capacitance, and correspondingly more current is required when using the same amplifier.
In contrast, due to the inclusion of temperature compensation and control functions, crystal oscillator modules generally require a power supply current of 10mA to 60mA.
The power supply current of a silicon oscillator depends on its type and function, and can range from a few microamps for low-frequency (fixed) devices to a few milliamps for programmable devices. A low-power silicon oscillator, such as MAX7375, requires less than 2mA when operating at 4MHz.
Conclusion
In a specific microcontroller application, selecting the best clock source requires comprehensive consideration of the following factors: accuracy, cost, power consumption, and environmental requirements. The following table shows several commonly used oscillator types and analyzes their advantages and disadvantages.
More about Microcontroller: https://www.utmel.com/blog/categories/microcontrollers/what-is-a-microcontroller
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Alan Lin
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Mfr No :
GRM155R60J475ME47D
Utmel No :
397-GRM155R60J475ME47D
Mfr :
Murata Electronics North America
Description :
GRM155R60J475ME47D Murata Electronics North America, CAP CER 4.7UF 6.3V X5R 0402
The Murata GRM series capacitors are Multilayer Ceramic Chip Capacitors (MLCC) used for general purpose applications. These MLCC capacitors are classified into temperature compensating and high dielectric constant types depending on the change in electrostatic capacitance due to change in temperature. The temperature compensating capacitors feature a small rate of change in electrostatic capacitance as the temperature changes and are used for applications such as filters and high frequency circuit matching. The high dielectric constant capacitors use materials with a high dielectric constant and feature a large electrostatic capacitance. Typical applications are power supply decoupling and smoothing circuits.
*Large capacity and small size in a multilayer structure
*Capacitance value ranging from 0.1pF to 220µF
*Tin plated external electrodes, excellent solderability
*Provides good high frequency characteristics
*Excellent pulse response
*High reliability
*Capacitor size varies from 0.4×0.2mm to 5.7×5.0mm
*Rated voltage of 2.5VDC to 3.15KVDC
*Temperature characteristics are classified according to JIS and EIA standard
*Operating temperature changes according to TCR values
Applications
Consumer Electronics, Portable Devices, Power Management, Industrial
Purchase: https://www.utmel.com/productdetail/murata-electronics-north-america-grm155r60j475me47d-e1f54874
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